symbol 10 sec steady state v ds v gs -10 -8 -8 -6 i dm 3.1 1.7 2.0 1.1 t j , t stg paramete r symbol typ max t 10s 32 40 steady state 60 75 steady state r jl 17 24 c -55 to 150 w 25 -80 a v v maximum junction-to-lead c c/w thermal characteristics units maximum junction-to-ambient a c/w maximum junction-to-ambient a c/w r ja drain-source voltage pulsed drain current b -30 absolute maximum ratings t a =25c unless otherwise noted continuous drain current a units parameter t a =25c t a =70c junction and storage temperature range t a =70c i d gate-source voltage p d power dissipation a t a =25c g s s s d d d d AO4435 p-channel enhancement mode field effect transistor features v ds = -30v i d = -10a (v gs = -10v) r ds(on) < 18m ? (v gs = -10v) r ds(on) < 36m ? (v gs = -5v) general description the AO4435 uses advanced trench technology to provide excellent r ds(on) , and ultra-low low gate charge with a 25v gate rating. this device is suitable for use as a load switch or in pwm applications. standard product AO4435 is pb-free (meets rohs & sony 259 specifications). g d s soic-8 top view alpha & omega semiconductor, ltd. www.aosmd.com
AO4435 symbol min typ max units bv dss -30 v -1 t j = 55c -5 i gss 100 na v gs(th) -1.7 -2.3 -3 v i d(on) -80 a 15 18 t j =125c 22 27 27 36 g fs 22 s v sd -0.74 -1 v i s -3.5 a c iss 1130 1400 pf c oss 240 pf c rss 155 pf r g 5.8 8 ? q g(10v) 18 24 nc q g(4.5v) 9.5 q gs 5.5 nc q gd 3.3 nc t d(on) 8.7 ns t r 8.5 ns t d(off) 18 ns t f 7ns t rr 25 30 ns q rr 12 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. v gs =0v, v ds =-15v, f=1mhz input capacitance output capacitance turn-on rise time total gate charge turn-off delaytime v gs =-10v, v ds =-15v, r l =1.5 ? , r gen =3 ? turn-off fall time turn-on delaytime m ? switching parameters gate source charge gate drain charge total gate charge v gs =-10v, v ds =-15v, i d =-10a dynamic parameters maximum body-diode continuous current gate resistance v gs =0v, v ds =0v, f=1mhz i s = -1a,v gs = 0v v ds = -5v, i d = -10a v gs = -5v, i d = -5a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds = v gs i d = -250 a v ds = -30v, v gs = 0v v ds = 0v, v gs = 25v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =-10a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d = -250 a, v gs = 0v v gs = -10v, v ds = -5v v gs = -10v, i d = -10a reverse transfer capacitance i f =-10a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a = 25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using < 300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. g. e ar and i ar ratings are based on low frequency and duty cycles to keep t j =25c. rev0: aug. 2007 alpha & omega semiconductor, ltd. www.aosmd.com
AO4435 typical electrical and thermal characteristic s i f =-6.5a, di/dt=100a/ s this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisin g out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 20 40 60 80 012345 -v ds (volts) figure 1: on-region characteristics -i d (a) -6v -8v -10v -4.5v 0 20 40 60 80 0123456 -v gs (volts) figure 2: transfer characteristics -i d (a) 25c 125c v ds = -5v 10 20 30 40 0 5 10 15 20 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =-10v v gs =-5v 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance 10 15 20 25 30 35 40 45 345678910 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d =-10a 25c 125c v gs = -4v v gs =-10v i d =-10a v gs =-5v i d =-5a alpha & omega semiconductor, ltd. www.aosmd.com
AO4435 typical electrical and thermal characteristic s i f =-6.5a, di/dt=100a/ s this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisin g out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 2 4 6 8 10 0 5 10 15 20 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 500 1000 1500 2000 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction- to-ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance(note e) z ja normalized transient thermal resistance 0.01 0.1 1 10 100 1000 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 100ms 1 0s dc r ds(on) limited t j(max) =150c t a =25c 10 s v ds =-15v i d =-10a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =75c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c alpha & omega semiconductor, ltd. www.aosmd.com
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